Search results for "threshold [energy]"
showing 10 items of 31 documents
Ab initio calculation of Li7 photodisintegration
2004
The Li7 total photoabsorption cross section is calculated microscopically. As nucleon-nucleon interaction the semi-realistic central AV4' potential with S- and P-wave forces is taken. The interaction of the final 7-nucleon system is fully taken into account via the Lorentz Integral Transform (LIT) method. For the calculation of the LIT we use expansions in hyperspherical harmonics (HH) in conjunction with the HH effective interaction (EIHH) approach. The convergence of the LIT expansion is discussed in detail. The calculated cross section agrees quite well with the available experimental data, which cover an energy range from threshold up to 100 MeV.
Mass and low-lying levels ofIn106,108from theCd106,108(p,nγ)reactions
1984
106In has been studied via the reaction 106Cd(p,nγ)106In in the energy range Ep=7-9 MeV. Inbeam γ-ray excitation functions, γ-γ coincidence measurements, and β+-delayed γ-ray excitation functions have been used to identify thirteen levels in 106In. From this new level scheme the energy separation of the high-spin ground state and the low-spin isomer has been determined to be 28.6±0.5 keV. The threshold energy of the strongest low-lying γ-ray transition yields a mass excess for 106In of -80601±15 keV. Spins for some states are suggested by comparing the excitation functions to Hauser-Feshbach calculations. In-beam γ-ray excitation functions for the 108Cd(p,nγ)108In reaction give a mass exces…
Valence bands of poly(methylmethacrylate) and photoion emission in vacuum ultraviolet region
1992
Photoion and photoelectron yields were measured for poly(methylmethacrylate) in the photon energy region of 8–40 eV using synchrotron radiation. Further, the valence‐band structure was investigated with ultraviolet photoelectron spectra and valence effective Hamiltonian calculations. A significant difference was observed between the photon energy dependencies of photoion and photoelectron yields. The threshold energy for photoion emission was found to be 10.5 eV, while that for photoelectron emission was 8.5 eV, indicating holes created near the valence‐band top do not contribute to the ion emission. At the higher‐energy region, the ion emission efficiency was found to be enhanced in the ph…
Meson-baryon threshold effects in the light-quark baryon spectrum
2008
We argue that selected $S$ wave meson-baryon channels may play a key role to match poor baryon mass predictions from quark models with data. The identification of these channels with effective inelastic channels in data analysis allows to derive a prescription which could improve the extraction and identification of baryon resonances.
Evaluation of the displacement energy of Gd atoms in GdBa2Cu3O7−δ from experimental data
1994
Abstract The processing of experimental data on Gd-containing high-temperature superconductor degradation resulting from thermal neutron irradiation has made it possible to evaluate the ratio of the degradation rates of GdBa2Cu3O7−gd enriched with 155Gd and 157Gd isotopes respectively. The defect production in the compound due to (n, γ) reactions on Gd nuclei and consequent recoil of Gd nuclei emitting γ-quanta was simulated with experimentally determined γ-spectra by a Monte Carlo technique. The displacement probabilities pd(155) and pd(157) for different threshold energies Ed and the threshold energy of Gd atom displacement producing disordered bubbles in GdBa2Cu3O7−δ, E d ∗ ≈ 150 eV , we…
Solid state solvation effect and reduced amplified spontaneous emission threshold value of glass forming DCM derivative in PMMA films
2015
Abstract Molecule crystallization is one of the limitations for obtaining high-gain organic laser systems. One of the examples is well known red laser dye 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM). The lowest threshold value of amplified spontaneous emission was achieved by doping 2 wt% of DCM molecule in tris-(8-hydroxy quinoline) aluminum (Alq3) matrix. Further increase of the DCM dye concentration makes the system less efficient as its threshold value increases. It is due to large intermolecular interaction, which induces photoluminescence quenching. Compounds with reduced intermolecular interaction could be prospective in organic laser systems due to higher …
Limits of the linear viscoelastic behaviour of polyamide 66 filled with TiO2 nanoparticles: Effect of strain rate, temperature, and moisture
2008
Abstract Limits of linear viscoelastic behaviour of TiO 2 nanoparticle-filled polyamides are estimated quantitatively by the results of uniaxial tension tests. The stress limit of the filled polymer is higher than that of the un-filled one. Their values are the lower, the higher the temperature and moisture content of test specimens, and the lower, the lower the strain rate. The concept of an energy threshold for the linear viscoelastic behaviour is used to comprehensively characterize the limits over a wide range of test conditions. The energy limit is not affected by the strain rate, temperature, or moisture, and its value for the filled polymer is higher than that for the un-filled one. …
The interplay between cooperativity and diversity in model threshold ensembles
2014
The interplay between cooperativity and diversity is crucial for biological ensembles because single molecule experiments show a significant degree of heterogeneity and also for artificial nanostructures because of the high individual variability characteristic of nanoscale units. We study the cross-effects between cooperativity and diversity in model threshold ensembles composed of individually different units that show a cooperative behaviour. The units are modelled as statistical distributions of parameters (the individual threshold potentials here) characterized by central and width distribution values. The simulations show that the interplay between cooperativity and diversity results …
Investigation of photoluminescence and amplified spontaneous emission properties of cyanoacetic acid derivative (KTB) in PVK amorphous thin films
2018
This work was supported by European Regional Development Fund within the Project No. 1.1.1.1/16/A/046 and A.Riekstins SIA “Mikrotīkls” donation, administered by University of Latvia Foundation.
A delay model valid in all the regions of operation of the MOS transistor for the energy-efficient design of MCML gates
2013
This paper presents a novel delay model for MCML circuits valid in all the regions of operation of the MOS transistor, i.e., weak inversion (sub-threshold), moderate inversion (near-threshold) and strong inversion. The proposed delay model was employed to develop an automated methodology for the energy-efficient design of such circuits. The tradeoff that can be realized between energy and delay was investigated. Experiments were performed using different technologies to understand the impact of technology scaling on that tradeoff too. Major results of this study are as follows. In a circuit designed for minimum energy consumption, the minimum energy point occurs in the near-threshold region…